In situ observation of InP(001) growth under metalorganic chemical vapor deposition using synchrotron radiation source

Fujikawa, Seiji; Kawamura, Tomoaki*; Bhunia, S.*; Watanabe, Yoshio*

no journal, , 

Growth mechanism of InP(001) of metalorganic chemical vapor deposition has been studied by X-ray reflectivity and grazing incidence X-ray diffraction (GIXD). The changes of reflectivity signal suggested that growth mode depended on substrate temperature, and particularly the step-flow growth mode was dominant at more than 550C. Monitoring the fractional-order reflection of (21)-InP(001) using GIXD during the step-flow growth, the changes of fractional-order reflection suggested that indium atom migrate on the substrate surface more than 1 minute during the growth.